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| 2N5109 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The 2N5109 is a High Frequency Transistor for General Purpose Amplifier Applications. MAXIMUM RATINGS IC VCE PDISS 400 mA 20 V 1.0 W @ TA = 25 C O 2.5 W @ TC = 75 C O 1 = Emitter 2 = Base 3 = Collector CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO ICEX ICEO IEBO hFE VCE(SAT) ft COB NF Gve Pin IC = 5.0 mA IC = 5.0 mA IC = 100 A VCE = 35 V VCE = 15 V VCE = 15 V VEB = 3.0 V VCE = 15 V VCE = 5.0 V IC = 100mA VCE = 15 V VCB = 15 V TA = 25 C O NONE TEST CONDITIONS RBE = 10 VBE = -1.50 V VBE = -1.50 V TC = 150 C O MINIMUM 20 40 40 TYPICAL MAXIMUM UNITS V V V 5.0 20 100 mA A A --V MHz IC = 50 mA IC = 360 mA IB = 10 mA IC = 50 mA f = 200 MHz f = 1.0 MHz 40 5.0 220 0.5 1200 3.5 3.0 1.1 0.1 pF dB dB W VCE = 15 V IC = 10 mA RG = 50 f = 200 MHz VCC = 15 V IC = 50 mA f = 50 to 216 MHz VCC = 15 V IC = 50 mA Rs = 50 f = 200 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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